Effects of MgO annealing process in a vacuum on the discharge characteristics of AC PDP

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 60, Issue 2, 1999, Pages 149-155

  Park, Chung Hoo ^a   Kim, Young Kee ^a   Park, Byeong Eon ^b   Lee, Woo Geun ^a   Cho, Jung Soo ^a  

^a Pusan National University   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRACKS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRON BEAMS; GLOW DISCHARGES; MAGNESIA; MORPHOLOGY; SURFACE DISCHARGES; THERMAL EFFECTS; VACUUM;

ELECTRON BEAM EVAPORATION;

DIELECTRIC FILMS;

EID: 0032686705     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00028-8     Document Type: Article

References (10)

1. Park C.-H., Lee W.-G., Kim D.-H., Ha H.-J., Ryu J.-Y. Surf. Coating Technol. 110/3:1998;128-135.
2. Ha H.J., Lee W.G., Park M.H., Kim J.Y., Cho J.S., Park C.H. A study on the preparation of MgO protection layer by reactive sputtering and its characteristics for PDP. K.I.E.E. 46(4):1997;610-616.
3. Rajopadhye N.R., Joglekar V.A., Bhoraskar V.N., Bhoraskar S.V. Solid State Commun. 60(8):1986;675-679.
4. Hakomori M., Matsuzaki K., Kurauchi T., Matsuura M., Yamakawa H. SID 98 Digest. 1998;869-872.
5. Pan C., O'Keefe P., Kester J.J. SID 98 Digest. 1998;865-868.
6. Andoh S., Murase K., Umeda S., Nakayama N. IEEE Trans. E.D. 23(3):1976;319-324.
7. Aboelfotoh M.O., Sahni O. Proc. S.I.D. 22/4:1981;219-227.
8. Aboelfotoh M.O., Park K.C., Pliskin W.A. J. Appl. Phys. 48:1977;2910-2917.
9. Byrum B.W. IEEE Trans. E.D. 22:1975;685-691.
10. Machda K., Uchike H., Sasaki H. SID 92 Digest. 1992;531-534.