Faceting of homoepitaxial MgO(1 1 0) layers prepared by electron beam evaporation

Surface Science

Volumn 558, Issue 1-3, 2004, Pages 211-217

  Sugawara, Akira ^a,b   Mae, K ^a,c  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

^c Humming Heads Inc   (Japan)

Author keywords

Atomic force microscopy; Epitaxy; Faceting; Growth; Magnesium oxides; Reflection high energy electron diffraction (RHEED)

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; INTERFACIAL ENERGY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; SURFACE STRUCTURE; SURFACES;

AU COLLOIDS; ELECTRON BEAM EVAPORATION; FACETING; ROCK-SALT;

MAGNESIA;

EID: 2442580821     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.04.002     Document Type: Article

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