Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

Journal of Crystal Growth

Volumn 158, Issue 1-2, 1996, Pages 84-88

  Masuda, Atsushi ^a   Yamanaka, Yasuhiro ^a,c   Tazoe, Mitsutoshi ^a   Nakamura, Takanori ^b   Morimoto, Akiharu ^a   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b MURATA MANUFACTURING CO LTD   (Japan)

^c PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; EXCIMER LASERS; GALLIUM COMPOUNDS; LASER ABLATION; LEAD COMPOUNDS; MAGNESIA; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; TITANIUM COMPOUNDS; ZIRCONIUM COMPOUNDS;

LEAD-TITANATE-ZIRCONATE THIN FILMS;

THIN FILMS;

EID: 0029779177     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00317-7     Document Type: Article

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