Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2278-2281

  Afanas'ev, V V ^a   Shamuilia, S ^a   Badylevich, M ^a   Stesmans, A ^a   Edge, L F ^b   Tian, W ^b   Schlom, D G ^b   Lopes, J M J ^c   Roeckerath, M ^c   Schubert, J ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Band offsets; Bandgap width; Epitaxial insulators; Internal photoemission

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; PHOTOEMISSION;

BAND OFFSETS; BANDGAP WIDTH; EPITAXIAL INSULATORS; INTERNAL PHOTOEMISSION;

SILICON COMPOUNDS;

EID: 34248678458     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.113     Document Type: Article

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