Trends in the ultimate breakdown strength of high dielectric-constant materials

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1771-1778

  McPherson, Joe W ^a   Kim, Jinyoung ^a   Shanware, Ajit ^a   Mogul, Homi ^a   Rodriguez, John ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Dielectric breakdown; Gate dielectric; High k gate dielectric; MOS devices; Oxide; Reliability; Semiconductor device reliability; Time dependent dielectric breakdown (TDDB)

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; MOS DEVICES; PERMITTIVITY;

DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 0042527442     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815141     Document Type: Article

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