Inversion mobility and gate leakage in high-k/metal gate MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 391-394

  Kotlyar, R ^a   Giles, M D ^a   Matagne, P ^a   Obradovic, B ^a   Shifren, L ^a   Stettler, M ^a   Wang, E ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE SCATTERING; CARRIER MOBILITY; COMPUTER SIMULATION; DIELECTRIC DEVICES; GATES (TRANSISTOR); LEAKAGE CURRENTS; PHONONS; POLYSILICON; MOSFET DEVICES;

ISOTROPIC APPROXIMATION; SCATTERING STRENGTH; SILICON BAND STRUCTURE; SUBBAND MOBILITY;

MOSFET DEVICES; SILICA;

GATE-LEAKAGE; HIGH- K; HIGH-K GATE STACKS; HIGH-K/METAL GATES; HIGH-PERFORMANCE TRANSISTOR SCALING; METAL GATE MOSFETS; METAL-GATE;

EID: 21644435485     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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