Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 230-231

  Cartier, E ^a   McFeely, F R ^a   Narayanan, V ^a   Jamison, P ^b   Linder, B P ^a   Copel, M ^a   Paruchuri, V K ^a   Basker, V S ^a   Haight, R ^a   Lim, D ^a   Carruthers, R ^a   Shaw, T ^a   Steen, M ^a   Sleight, J ^b   Rubino, J ^a   Deligianni, H ^a   Guha, S ^a   Jammy, R ^a   Shahidi, G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE TRANSFER; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; METAL ANALYSIS; OXYGEN; PARTIAL PRESSURE; THERMAL EFFECTS;

FLATBAND/THRESHOLD VOLTAGES; FORMING GAS ANNEALING (FGA); GATE STACK; OXYGEN VACANCIES;

FIELD EFFECT TRANSISTORS;

EID: 33646866238     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469279     Document Type: Conference Paper

References (8)

1. C. Hobbs, et. al., Symp. on VLSI Technology, p. 9 (2003)
2. K. Shiraishi, et al., Symp. on VLSI Technology, p. 108 (2004)
3. J. K. Schaeffer, et al., Appl. Phys. Lett. 85, 1826 (2004)
4. Y. C. Yeo, et al., Electron Device Lett. 23, 342 (2002)
5. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000)
6. V. Narayanan, et al., Symp. on VLSI Technology, p. 192 (2004)
7. R. G. Wilson, J. Appl. Phys. 37, 3170 (1966)
8. R. Carter, et. al., Appl. Phys. Lett. 83, 533 (2003).