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Volumn 89, Issue 13, 2006, Pages

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; HYDROGENATED SILICON SUBSTRATES; LOW LEAKAGE CURRENTS; METAL OXIDE SEMICONDUCTOR CAPACITORS;

CAPACITANCE; CAPACITORS; DEPOSITION; ELECTRIC CURRENTS; GADOLINIUM ALLOYS; MOS DEVICES; PERMITTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 33749247562 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2354423 Document Type: Article

Times cited : (62)

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