Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 3, 1999, Pages 954-960

  Mao, A Y ^a   Son, K A ^a   White, J M ^a   Kwong, D L ^a   Roberts, D A ^b   Vrtis, R N ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000485283     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581670     Document Type: Article

References (28)

1. H. Shinriki, T. Kisu, S. Kimura, Y. Nishioka, Y. Kawamoto, and K. Mukai, IEEE Trans. Electron Devices 37, 1939 (1990).
2. N. Rausch and E. P. Burte, Microelectron. J. 24, 421 (1993).
3. J. Yun and S. Rhee, Thin Solid Films 292, 324 (1997).
4. W. S. Lau, P. W. Qian, N. P. Sandler, K. A. McKinley, and P. K. Chu, Jpn. J. Appl. Phys., Part 1 36, 661 (1997).
5. S. Zaima, T. Furuta, Y. Yasuda, and M. Lida, J. Electrochem. Soc. 137, 1297 (1990).
6. S. C. Sun and T. F. Chen, Tech. Dig. Int. Electron Devices Meet. 687 (1996).
7. W. S. Lau, K. K. Khaw, P. W. Qian, N. P. Sandler, and P. K. Chu, Jpn. J. Appl. Phys., Part 1 35, 2599 (1996).
8. S. K. Madan, IEEE Trans. Electron Devices 42, 1871 (1995).
9. S. C. Sun and T. F. Chen, Tech. Dig. Int. Electron Devices Meet. 333 (1994).
10. H. Shinriki and M. Nakata, IEEE Trans. Electron Devices 38, 455 (1991).
11. E. P. Burte and N. Rausch, J. Non-Cryst. Solids 187, 425 (1995).
12. S. Kamiyama, T. Saeki, H. Mori, and Y. Numasawa, Tech. Dig. Int. Electron Devices Meet. 827 (1991).
13. S. W. Park, Y. K. Baek, J. Y. Lee, C. O. Park, and H. B. Im, J. Electron. Mater. 21, 635 (1992).
14. K.-A. Son, A. Y. Mao, Y.-M. Sun, B. Y. Kim, F. Liu, A. Kamath, J. M. White, D. L. Kwong, D. A. Roberts, and R. N. Vrtis, Appl. Phys. Lett. 72, 1187 (1998).
15. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Eden Prairie, MN, 1995).
16. 7/2 at 27 eV compared to 26.9 eV in our work [Fig. 1(a)].
17. K.-A. Son, A. Y. Mao, B. Y. Kim, F. Liu, E. D. Pylant, D. A. Hess, J. M. White, D.-L. Kwong, D. Roberts, and R. Vrtis, J. Vac. Sci. Technol. A 16, 1670 (1998).
18. K.-A. Son, A. Y. Mao, D. A. Hess, L. A. Brown, J. M. White, D.-L. Kwong, D. Roberts, and R. Vrtis, Electrochem. Solid-State Let. 1, 178 (1998).
19. K.-A. Son, A. Y. Mao, D. A. Hess, L. A. Brown, J. M. White, D. L. Kwong, D. A. Roberts, and R. N. Vrtis, Thin Sold Films (in press).
20. P. De Bievre and P. D. P. Taylor, Int. J. Mass Spectrom. Ion Processes 123, 149 (1993).
21. F. W. Walker, J. R. Parrington, and F. Feiner, Nuclides and Isotopes, 14th ed. (General Electric, San Jose, CA, 1989).
22. Y. Takakuwa, M. Nihei, and N. Miyamoto, Jpn. J. Appl. Phys., Part 2 32, L480 (1993).
23. Y. Takakuwa, M. Nihei, T. Horie, and N. Miyamoto, J. Non-Cryst. Solids 179, 345 (1994).
24. Y.-K. Sun, D. J. Bonser, and T. Engel, J. Vac. Sci. Technol. A 10, 2314 (1992).
25. Y. Kobayashi and K. Sugii, J. Vac. Sci. Technol. A 10, 2308 (1992).
26. U. Johansson, H. Zhang, and R. Nyholm, J. Electron Spectrosc. Relat. Phenom. 84, 45 (1997).
27. H.-E. Sasse and U. Konig, J. Appl. Phys. 67, 6194 (1990).
28. H. F. Luan, B. Z. Wu, L. G. Kang, R. Vrtis, D. Roberts, and D. L. Kwong, Tech. Dig. Int. Electron Devices Meet. 609 (1998).