Alternate gate oxides for silicon mosfets using higii-tf dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 409-414

  Billman, C A ^a   Tan, P H ^a   Hubbard, K J ^a   Schlom, D G ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUATIONS OF STATE; HIGH TEMPERATURE OPERATIONS; MOSFET DEVICES; NITRIDES; PERMITTIVITY; POLARIZATION; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

ALTERNATIVE GATE DIELECTRIC; BINARY NITRIDES; BINARY OXIDES; CLAUSIUS MOSSOTTI EQUATION; GATE OXIDES; IONIC POLARIZABILITIES;

OXIDES;

EID: 0033341068     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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