Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6230-6232

  Preisler, E J ^a   Guha, S ^a   Copel, M ^a   Bojarczuk, N A ^a   Reuter, M C ^a   Gusev, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONIC STRUCTURE; OXIDATION; THERMAL DIFFUSION;

INTERFACIAL OXIDE FORMATION; NITROGEN ANNEALING; OXYGEN SOLUBILITY; THERMAL ANNEALING;

FIELD EFFECT TRANSISTORS;

EID: 20444498267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834995     Document Type: Article

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