Status of SiC bulk growth processes

Journal of Physics D: Applied Physics

Volumn 40, Issue 20, 2007, Pages 6150-6158

  Chaussende, D ^a   Wellmann, P J ^b   Pons, M ^c  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH RATE; PROCESS ENGINEERING; SINGLE CRYSTALS;

BULK GROWTH PROCESSES; EMERGING PROCESSES; PROCESS ENGINEERING MODELLING;

SILICON CARBIDE;

EID: 36048935570     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/20/S02     Document Type: Article

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