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Volumn 198-199, Issue pt 2, 1999, Pages 1005-1010

Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

(8) Hofmann, D a Bickermann, M a Eckstein, R b Kolbl M b Muller St G a,c Schmitt, E b Weber, A b Winnacker, A a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b SICRYSTAL AG (Germany)

c Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); MATHEMATICAL MODELS; SILICON CARBIDE; STRESSES; SUBLIMATION; THERMAL GRADIENTS; VAPORS;

AXIAL TEMPERATURE GRADIENTS; GROWTH RATE AUGMENTATION; MICROPIPES; PHYSICAL VAPOR TRANSPORT; RADIAL TEMPERATURE GRADIENTS; SECOND PHASE FORMATION; SILICON CARBIDE BULK CRYSTALS;

CRYSTALS;

EID: 0033514582 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01212-3 Document Type: Article

Times cited : (82)

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