Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 91-94

  Chaussende, D ^a,b   Balloud, C ^c   Auvray, L ^a,b   Baillet, F ^d   Zielinski, M ^c   Juillaguet, S ^c   Mermoux, M ^e   Pernot, E ^a   Camassel, J ^c   Pons, M ^d   Madar, R ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b SAVOIE TECHNOLAC   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d UNIV GRENOBLE ALPES   (France)

^e Grenoble INP Phelma   (France)

Author keywords

4H SiC; Photoluminescence; PVT; SIMS; SWBXT; Thick layers

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DOPING (ADDITIVES); LATTICE CONSTANTS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; PURIFICATION; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; X RAYS;

4H-SIC; PHYSICAL VAPOR TRANSPORT (PVT); SWBXT; THICK LAYERS;

SILICON CARBIDE;

EID: 8744275388     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.91     Document Type: Conference Paper

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