Transient model for the sublimation growth of silicon carbide single crystals

Journal of Crystal Growth

Volumn 205, Issue 3, 1999, Pages 294-304

  Bubner, Nikolaus ^a   Klein, Olaf ^a   Philip, Peter ^a   Sprekels, Jürgen ^a   Wilmański, Krzysztof ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; CRYSTAL GROWTH; DIFFUSION; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; PARTIAL DIFFERENTIAL EQUATIONS; SILICON CARBIDE; SUBLIMATION; TEMPERATURE DISTRIBUTION;

CONSERVATION LAWS; MIXTURE THEORY; MODIFIED LELY METHOD; REACTION DIFFUSION EQUATIONS; SUBLIMATION GROWTH;

SINGLE CRYSTALS;

EID: 0032598136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00274-2     Document Type: Article

References (7)

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