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Volumn 527-529, Issue PART 1, 2006, Pages 99-102

Characterization of bulk 〈111〉 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

Author keywords

3C SiC; Bulk growth; Characterization

Indexed keywords

BIREFRINGENCE; CRYSTAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NUCLEATION; SILICON CARBIDE;

EID: 36049033399     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.99     Document Type: Conference Paper
Times cited : (17)

References (11)
  • 11
    • 0032271587 scopus 로고    scopus 로고
    • J-P. Bergman, E. Janzén and W.J. Choyke: Physica Stat. Sol. (b). 210, (1998), p. 407 and Refs. therein.
    • J-P. Bergman, E. Janzén and W.J. Choyke: Physica Stat. Sol. (b). Vol 210, (1998), p. 407 and Refs. therein.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.