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Volumn 527-529, Issue PART 1, 2006, Pages 99-102
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Characterization of bulk 〈111〉 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method
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Author keywords
3C SiC; Bulk growth; Characterization
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Indexed keywords
BIREFRINGENCE;
CRYSTAL GROWTH;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
INTERFACES (MATERIALS);
NUCLEATION;
SILICON CARBIDE;
3C-SIC;
BIREFRINGENCE MICROSCOPY;
BULK GROWTH;
DPB (DOUBLE POSITIONING BOUNDARY);
SINGLE CRYSTALS;
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EID: 36049033399
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-425-1.99 Document Type: Conference Paper |
Times cited : (17)
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References (11)
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