Ultrahigh-quality silicon carbide single crystals

Nature

Volumn 430, Issue 7003, 2004, Pages 1009-1012

  Nakamura, Daisuke ^a   Gunjishima, Itaru ^a   Yamaguchi, Satoshi ^a   Ito, Tadashi ^a   Okamoto, Atsuto ^a   Kondo, Hiroyuki ^b   Onda, Shoichi ^b   Takatori, Kazumasa ^a  

^a Rd Management Section   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; SILICON CARBIDE;

CRYSTAL DIAMETER; DISLOCATION-FREE; ELEMENTARY DISLOCATIONS;

SINGLE CRYSTALS;

GALLIUM ARSENIDE; SILICON CARBIDE;

ELECTRONIC EQUIPMENT; SILICON;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; DENSITY; DEVICE; ELECTRONICS; ENERGY; PRIORITY JOURNAL; X RAY ANALYSIS;

EID: 4344658558     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02810     Document Type: Article

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