SiC single crystal growth by a modified physical vapor transport technique

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Wellmann, Peter ^a   Desperrier, Patrick ^a   Müller, Ralf ^a   Straubinger, Thomas ^a   Winnacker, Albrecht ^a   Baillet, Francis ^b   Blanquet, Elisabeth ^b   Marc Dedulle, Jean ^b   Pons, Michel ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

A1. Computer simulation; A1. Doping; A2. Growth from vapor; B2. Semiconducting silicon compounds

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; CRYSTAL GROWTH; NITROGEN; PHOSPHORUS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

GAS PHASE COMPOSITION; GROWTH FROM VAPOR; PHYSICAL VAPOR TRANSPORT (PVT); SUPER-SATURATION;

SILICON CARBIDE;

EID: 15944386304     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.070     Document Type: Conference Paper

References (7)

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