Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 333-338

  Selder, M ^a   Kadinski, L ^a   Makarov, Yu ^a   Durst, F ^a   Wellmann, P ^a   Straubinger, T ^a   Hofmann, D ^a   Karpov, S ^b   Ramm, M ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b SOFT IMPACT LTD   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; DIFFERENTIAL EQUATIONS; ELECTROMAGNETIC FIELDS; HEAT TRANSFER; INTERFACES (MATERIALS); MASS TRANSFER; SILICON CARBIDE; TEMPERATURE;

PHYSICAL VAPOR TRANSPORT; SILICON CARBIDE BULK GROWTH;

CRYSTAL GROWTH;

EID: 0033886631     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00853-2     Document Type: Article

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