Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 13-16

  Nishizawa, Shin Ichi ^a   Michikawa, Yumi ^a   Kato, Tomohisa ^a   Hirose, Fusao ^b   Oyanagi, Naoki ^b   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Advanced Power Device Laboratory   (Japan)

Author keywords

Bulk Growth; Numerical Simulation; SiC; Stress; Sublimation

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; FINITE ELEMENT METHOD; POLYCRYSTALS; RESIDUAL STRESSES; SINGLE CRYSTALS;

BULK GROWTH;

SILICON CARBIDE;

EID: 0242665544     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.13     Document Type: Conference Paper

References (10)

1. S.Nishizawa, T.Kato, Y.Kitou, N.Oyanagi and K.Arai: Mater. Sci. Forum Vol.389-393 (2002), p. 43
2. Y.Kitou, W.Bahng, T.Kato, S.Nishizawa and K.Arai: Mater. Sci. Forum Vol.389-393 (2002), p. 83
3. A.S.Bakin, S.I.Dorozhkin, A.O.Lebedev, B.A.Kirillov, A.A.Ivanov and Yu.M.Tairov: J.Crystal Growth, Vol.198/199 (1999), p.1015
4. St.G.Muller, R.C.Glass, H.M.Hobgood, V.F.Tsvetkov, M.Brady, D.Henshall, J.R.Jenny, D.Malta and C.H.Carter Jr.: J.Crystal Growth Vol.211 (2000), p. 325
5. I.A.Zhmakin, A.V.Kulik, S.Yu.Karpov, S.E.Demina, M.S.Ramm and Yu.N.Makarov, Diamond and Related Mater.: Vol.9 (2000), p.446
6. M.Sleder, L.Kadinski, D.Durst and D.Hofmann: J.Crystal Growth Vol. 226 (2001), p.501
7. M.Pons, E.Blanquet, J.M.Dedulle, I.Garcon, R.Madar and C.Bernard: J.Electrochem.Soc., Vol.143(1996), p.3727
8. Flux-Expert, SIMULOG, France.
9. K.Kamitani, M.Grimsdditch, J.C.Nipko and C.K.Loong: J.Appl.Phys. Vol.82 (1997), p.3152
10. M.Pons, private communication.