Growth of cubic silicon carbide crystals from solution

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 123-126

  Eid, J ^a   Santailler, J L ^a   Ferrand, B ^a   Ferret, P ^a   Pesenti, J ^a   Basset, A ^a   Passero, A ^a   Mantzari, A ^b   Polychroniadis, E K ^b   Balloud, C ^c   Soares, P ^c   Camassel, J ^c  

^a CEA LETI   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

3C SiC; Bulk growth; Solution growth

Indexed keywords

BOUNDARY CONDITIONS; BUOYANCY; INDUCTION HEATING; MASS TRANSFER; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE;

3C-SIC; BULK GROWTH; POLYCRYSTALLINE SILICON CARBIDE; SOLUTION GROWTH;

CRYSTAL GROWTH;

EID: 33845229404     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.123     Document Type: Conference Paper

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