Growth of micropipe-free single crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 39-42

  Basceri, C ^a   Khlebnikov, I ^a   Khlebnikov, Y ^a   Muzykov, P ^a   Sharma, M ^a   Stratiy, G ^a   Silan, M ^a   Balkas, C ^a  

^a Intrinsic Semiconductor Corp   (United States)

Author keywords

Dislocations; Facet borders; Micropipe; Micropipe free growth; Polytype inclusions

Indexed keywords

CRYSTAL GROWTH; NUCLEATION; SILICON CARBIDE; SUBSTRATES; WAFER BONDING;

FACET BORDERS; MICROPIPE FREE GROWTH; MICROPIPES; PHYSICAL VAPOR TRANSPORT (PVT); POLYTYPE INCLUSIONS;

SINGLE CRYSTALS;

EID: 36048946367     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.39     Document Type: Conference Paper

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