SiC homoepitaxial growth at low temperature by vapor-liquid-solid mechanism in Al-Si melt

Crystal Growth and Design

Volumn 3, Issue 3, 2003, Pages 285-287

  Jacquier, Christophe ^a   Ferro, Gabriel ^a   Cauwet, François ^a   Chaussende, D ^b   Monteilt, Yves ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; PROPANE; SILICON DERIVATIVE;

ARTICLE; COOLING; CRYSTAL STRUCTURE; LIQUID; LOW TEMPERATURE; MELTING POINT; SAMPLING; SOLID; SURFACE PROPERTY; VAPOR;

EID: 0037572305     PISSN: 15287483     EISSN: None     Source Type: Journal    
DOI: 10.1021/cg0256069     Document Type: Article

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