Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 61-64

  Egorov, Yu E ^a   Galyukov, A O ^b   Gurevich, S G ^c   Makarov, Yu N ^a   Mokhov, E N ^d   Ramm, M G ^d   Ramm, M S ^d   Roenkov, A D ^d   Segal, A S ^e   Vodakov, Yu A ^d   Vorob'ev, A N ^e   Zhmakin, A I ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b Advanced Technology Cent   (Russian Federation)

^c Vologdin Institute of RF Currents   (Russian Federation)

^d IOFFE INSTITUTE   (Russian Federation)

^e ITMO UNIVERSITY   (Russian Federation)

Author keywords

Bulk Crystals; Silicon Carbide; Sublimation Growth; Tantalum

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; POWDERS; SILICON CARBIDE; SUBLIMATION; TANTALUM; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS;

STEPHAN FLOW; SUBLIMATION GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743103759     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.61     Document Type: Article

References (3)

1. Yu. A. Vodakov, A. D. Roenkov, M. G. Ramm, E. N. Mokhov and Yu. N. Makarov, Phys. Stat. Sol. v. 202 (1997), p. 177.
2. S. Yu. Karpov, Yu. N. Makarov, E. N. Mokhov, M. G. Ramm, M. S. Ramm, A. D. Roenkov, R. A. Talalaev, Yu. A. Vodakov, J. Crystal Growth v. 173 (1997), p. 408.
3. E. L. Kitanin et al, will be published in Mater. Sci. Engin. B (1997).