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Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 9-14

SiC crystal growth by HTCVD

(7) Ellison, A a Magnusson, B a,b Sundqvist, B a Pozina, G a Bergman, J P a,b Janzen E b Vehanen, A a

a Okmetic AB (Sweden)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

Bending; Bulk growth; Dislocations; HTCVD; Micropipe; Semi Insulating; Vacancies

Indexed keywords

BENDING (DEFORMATION); CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; NUCLEATION; POLYCRYSTALLINE MATERIALS; PURIFICATION; SILICON WAFERS;

BULK GROWTH; HTCVD; MICROPIPES; SEMI-INSULATING; VACANCIES;

SILICON CARBIDE;

EID: 8744310092 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.9 Document Type: Conference Paper

Times cited : (72)

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