Characterization of defects in 3C-silicon carbide crystals

Journal of Crystal Growth

Volumn 260, Issue 1-2, 2004, Pages 201-208

  Vetter, William M ^a   Dudley, Michael ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

A1. High resolution X ray diffraction; A1. Stacking; A1. X ray topography; B1. Silicon carbide

Indexed keywords

IMAGE ANALYSIS; SILICON CARBIDE; STACKING FAULTS; X RAY DIFFRACTION ANALYSIS;

X-RAY TOPOGRAPHS;

SINGLE CRYSTALS;

EID: 0242439527     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.043     Document Type: Article

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