High SiC growth rate obtained by vapour-liquid-solid mechanism

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 105-108

  Boutarek, N ^a   Chaussende, D ^b   Madar, R ^b  

^a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^b MINATEC   (France)

Author keywords

6H SiC; Liquid phase; Solution growth; VLS

Indexed keywords

COBALT COMPOUNDS; DEPOSITION RATES; GROWTH RATE; LIQUIDS; SILICON CARBIDE; TITANIUM COMPOUNDS;

6H-SIC; FACETED MORPHOLOGY; HIGH TEMPERATURE; HOMOEPITAXIAL LAYERS; LIQUID HANDLING; LIQUID PHASE; SOLUTION GROWTH; VAPOUR-LIQUID-SOLID MECHANISMS;

SILICON ALLOYS;

EID: 36049004652     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.105     Document Type: Conference Paper

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