Transport phenomena in sublimation growth of SiC bulk crystals

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 40-43

  Segal, A S ^a   Vorob'ev, A N ^a   Karpov, S Yu ^b   Makarov, Yu N ^c   Mokhov, E N ^d   Ramm, M G ^d   Ramm, M S ^d   Roenkov, A D ^d   Vodakov, Yu A ^d   Zhmakin, A I ^d  

^a ITMO UNIVERSITY   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

Diffusion and convective mass transport; SiC; Stephan flow; Sublimation growth

Indexed keywords

BOUNDARY CONDITIONS; COMPUTATIONAL METHODS; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; MASS TRANSFER; MATHEMATICAL MODELS; PARTIAL PRESSURE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION;

HERTZ-KNUDSEN RELATIONSHIP; KNUDSEN LAYERS; STEPHAN FLOW; SUBLIMATION GROWTH;

SILICON CARBIDE;

BOUNDARY CONDITIONS; CRYSTAL; TRANSPORT;

EID: 4244140195     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00441-3     Document Type: Article

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