Control of the supersaturation in the CF-PVT process for the growth of silicon carbide crystals: Research and applications

Crystal Growth and Design

Volumn 5, Issue 4, 2005, Pages 1539-1544

  Chaussende, Didier ^a   Ucar, Magali ^b,c   Auvray, Laurent ^a,b   Baillet, Francis ^c   Pons, Michel ^c   Madar, Roland ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b SAVOIE TECHNOLAC   (France)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844442434     PISSN: 15287483     EISSN: None     Source Type: Journal    
DOI: 10.1021/cg050009i     Document Type: Article

References (22)

1. Muller, S. G.; Glass, R. C.; Hobgood, H. M.; Tsvetkov, V. F.; Brady, M.; Henshall, D.; Malta, D.; Singh, R.; Palmour, J.; Carter, C. H. Mater. Sci. Eng. B 2001, B80, 327-331.
2. Ohtani, N.; Fujimoto, T.; Katsuno, M.; Aigo, T.; Yashiro, H. J. Cryst. Growth 2002, 237-239, 1180-1186.
3. Anderson, T. A.; Barrett, D. L.; Chen, J.; Elkington, W. T.; Emorhokpor, E.; Gupta, A.; Johnson, C. J.; Hopkins, R. H.; Martin, C.; Kerr, T.; Semenas, E.; Souzis, A. E.; Tanner, C. D.; Yoganathan, M.; Zwieback, I. Mater. Sci. Forum 2004, 457-460, 75-78.
4. Hofmann, D.; Bickermann, M.; Eckstein, R.; Kolbl, M.; Muller, S. G.; Schmitt, E.; Weber, A.; Winnacker, A. J. Cryst. Growth 1999, 198/199, 1005-1010.
5. Augustine, G.; Balakrishna, V.; Brandt, C. D. J. Cryst. Growth 2000, 211, 339-342.
6. Nishizawa, S. I.; Kato, T.; Kitou, Y.; Oyanagi, N.; Hirose, F.; Yamaguchi, H.; Bahng, W.; Arai, K. Mater. Sci. Forum 2004, 457-460, 29-34.
7. Nakamura, D.; Gunjishima, I.; Yamaguchi, S.; Ito, T.; Okamoto, A.; Kondo, H.; Onda, S.; Takatori, K. Nature 2004, 430, 1009-1012.
8. Ellison, A.; Magnusson, B.; Son, N. T.; Storasta, L.; Janzen, E. Mater. Sci. Forum 2003, 433-436, 33-38.
9. Chaussende, D.; Baillet, F.; Charpentier, L.; Pernot, E.; Pons, M.; Madar, R. J. Electrochem. Soc. 2003, 150, G653-G657.
10. Yakimova, R.; Syvajarvi, M.; Iakimov, T.; Jacobsson, H.; Raback, R.; Vehanen, A.; Janzen, E. J. Cryst. Growth 2000, 217, 255-262.
11. Wollweber, J.; Rost, H. J.; Schulz, D.; Siehe, D. Mater. Sci. Forum 2002, 389-393, 63-66.
12. Anikin, M.; Madar, R. Mater. Sci. Eng. 1997, 46, 278.
13. Takahashi, J.; Ohtani, N.; Kanaya, M. J. Cryst. Growth 1996, 167, 596-606.
14. Auvray, L.; Chaussende, D.; Baillet, F.; Charpentier, L.; Pons, M.; Madar, R. Mater. Sci. Forum 2004, 457-460, 135-138.
15. Kroko, L. J. J. Electrochem. Soc. 1966, 113, 801-808.
16. Vodakov, Y. A.; Mokhov, E. N.; Ramm, M. G.; Roenkov, A. D. Cryst. Res. Technol. 1979, 14, 729-740.
17. Charpentier, L.; Baillet, F.; Chaussende, D.; Pernot, E.; Pons, M.; Madar, R. Mater. Sci. Forum 2003, 433-436, 87-90.
18. Markov, I. V. In Crystal Growth for Beginners; World Scientific: London, 1996.
19. Fissel, A. Phys. Rep. 2003, 379, 149-255.
20. Neudeck, P. G.; Powell, J. A. In Silicon Carbide: Recent Major Advances; Choyke, W. J., Matsunami, H., Pensyl, G., Eds.; Springer Verlag: New York, 2004; pp 179-205.
21. Chaussende, D.; Balloud, C.; Auvray, L.; Baillet, F.; Zielinski, M.; Juillaguet, S.; Mermoux, M.; Pernot, E.; Camassel, J.; Pons, M.; Madar, R. Mater. Sci. Forum 2004, 457-460, 91-94.
22. Chaussende, D.; Latu-Romain, L.; Auvray, L.; Ucar, M.; Pons, M.; Madar, R. Mater. Sci. Forum 2005, 483-485, 225-228.