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Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 363-366

Growth of 6H-SiC crystals with low boron concentration

(8) Fanton, M A a Cavalero, R L a Weiland, B E a Ray, R G a Snyder, D W a Gamble, R D a Oslosky, E J a Everson, W J a

a PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

A1. Impurities; A2. Single crystal growth; B2. Semiconducting materials

Indexed keywords

GRAPHITE; GRAPHITIZATION; HALOGEN COMPOUNDS; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

DIFFUSION BARRIER COATINGS; SEMICONDUCTING MATERIALS; SINGLE CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 30444432238 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.045 Document Type: Conference Paper

Times cited : (4)

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