SCOPUS 정보 검색 플랫폼

Volumn 226, Issue 4, 2001, Pages 501-510

Global modeling of the SiC sublimation growth process: Prediction of thermoelastic stress and control of growth conditions

(4) Selder, M a Kadinski, L a Durst, F a Hofmann, D a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

A1. Computer simulation; A1. Heat transfer; A1. Stress; A2. Single crystal growth; A3. Physical vapor deposition processes; B1. Silicon carbide

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; PHYSICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SUBLIMATION; THERMAL STRESS; THERMOELASTICITY;

SEMITRANSPARENCY; SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 0035427048 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01401-4 Document Type: Article

Times cited : (47)

References (21)

1
- 0029234103
- (1995) J. Crystal Growth , vol.146 , pp. 214
- Hofmann, D.¹ Heinze, M.² Winnacker, A.³ Durst, F.⁴ Kadinski, L.⁵ Kaufmann, P.⁶ Makarov, Y.⁷ Schäfer, M.⁸

2
- 0031511530
- (1997) Phys. Stat. Sol. B , vol.202 , pp. 201
- Karpov, S.Y.¹ Makarov, Y.N.² Ramm, M.S.³

3
- 4243612646
- (1999) Mat. Sci. Eng. B , vol.61-62 , pp. 18
- Pons, M.¹ Anikin, M.² Chourou, K.³ Dedulle, J.M.⁴ Madar, R.⁵ Blanquet, E.⁶ Pisch, A.⁷ Bernard, C.⁸ Grosse, P.⁹ Faure, C.¹⁰ Basset, G.¹¹ Grange, Y.¹²

4
- 0033886631
- (2000) J. Crystal Growth , vol.211 , pp. 333
- Selder, M.¹ Kadinski, L.² Makarov, Y.³ Durst, F.⁴ Wellmannn, P.⁵ Straubinger, T.⁶ Hofmann, D.⁷ Karpov, S.⁸ Ramm, M.⁹

5
- 0033901679
- (2000) J. Crystal Growth , vol.211 , pp. 347
- Karpov, S.Y.¹ Kulik, A.V.² Zhmakin, I.A.³ Makarov, Y.N.⁴ Mokhov, E.N.⁵ Ramm, M.G.⁶ Ramm, M.S.⁷ Roenkov, A.D.⁸ Vodakov, Y.A.⁹

6
- 0042977079
- (2000) J. Crystal Growth , vol.211 , pp. 325
- Müller, S.G.¹ Glass, R.C.² Hobgood, H.M.³ Tsvetkov, V.F.⁴ Brady, M.⁵ Henshall, D.⁶ Jenny, J.R.⁷ Malta, D.⁸ Carter C.H., Jr.⁹

7
- 4243411646
- (1999) Mat. Sci. Eng. B , vol.61-62 , pp. 93
- Selder, M.¹ Kadinski, L.² Durst, F.³ Straubinger, T.⁴ Hofmann, D.⁵

8
- 0040647409
- (1997) High Temperature, High Pressure , vol.29 , pp. 73
- Nilson, O.¹ Mehling, H.² Horn, R.³ Fricke, J.⁴ Müller, St.⁵ Eckstein, R.⁶ Hofmann, D.⁷

9
- 2442607300
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 43
- Müller, S.G.¹ Fricke, J.² Hofmann, D.³ Horn, R.⁴ Nilsson, O.⁵ Rexer, B.⁶

10
- 0032483584
- (1998) Mater. Sci. Eng. B , vol.55 , pp. 174
- Kitanin, E.L.¹ Ramm, M.S.² Ris, V.V.³ Schmidt, A.A.⁴

11
- 0033514582
- (1999) J. Crystal Growth , vol.198-199 , pp. 1005
- Hofmann, D.¹ Bickermann, M.² Eckstein, R.³ Kölbl, M.⁴ Müller, St.G.⁵ Schmitt, E.⁶ Weber, A.⁷ Winnacker, A.⁸

12
- 4243481933
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 31
- Selder, M.¹ Kadinski, L.² Durst, F.³ Straubinger, T.⁴ Hofmann, D.⁵ Wellmannn, P.⁶

13
- 0003781076
- Oxford Claderon Press Oxford
- (1972) Physical Properties of Crystals
- Nye, J.F.¹

14
- 0003531591
- Wiley, New York
- (1982) Theory of Dislocations
- Hirth, J.P.¹ Lothe, J.²

15
- 0001219934
- (1997) J. Appl. Phys. , vol.82 , Issue.6 , pp. 3152
- Kamitani, K.¹ Grimsditch, M.² Nipko, J.C.³ Loong, C.K.⁴ Okada, M.⁵ Kimura, I.⁶

16
- 0019007084
- (1980) The Bell System Tech. J. , vol.59 , Issue.4 , pp. 593
- Jordan, A.S.¹ Caruso, R.² Von Neida, A.R.³

17
- 0032027956
- (1998) Phys. Stat. Sol. A , vol.166 , pp. 155
- Samant, A.V.¹ Zhou, W.L.² Pirouz, P.³

18
- 0033618713
- (1999) Mat. Sci. Eng. B , vol.61-62 , pp. 48
- Hofmann, D.¹ Schmitt, E.² Bickermann, M.³ Kölbl, M.⁴ Wellmann, P.J.⁵ Winnacker, A.⁶

19
- 3743112674
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 623
- Müller, S.G.¹ Eckstein, R.² Fricke, J.³ Hofmann, D.⁴ Hofmann, R.⁵ Horn, R.⁶ Mehling, H.⁷ Nilsson, O.⁸

20
- 0004058823
- Wiley, New York
- (1996) Engineering Optimization
- Rao, S.S.¹

21
- 0000058992
- D.T.J. Hurle (ed.), Elsevier Science, Amsterdam
- (1994) Handbook of Crystal Growth , vol.2 , pp. 821
- Völkl, J.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.