Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 617-620

  Pusche R ^a   Hundhausen, M ^a   Ley, L ^a   Semmelroth, K ^a   Schmid, F ^a   Pensl, G ^a   Nagasawa, H ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

Annealing CVD; Cubic SiC; Raman spectroscopy

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; GROWTH (MATERIALS); HEAT TREATMENT; PHASE TRANSITIONS; PYROMETERS; RAMAN SPECTROSCOPY; SUBSTRATES;

CUBIC SIC; HOST CRYSTAL; PHYSICAL VAPOUR TRANSPORT (PVT); POLYTYPE TRANSFORMATIONS;

SILICON CARBIDE;

EID: 8744262818     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.617     Document Type: Conference Paper

References (3)

1. H. Nagasawa, T. Kawahara and K. Yagi: Mater. Sci. Forum 389-393 (2001), p. 319.
2. K. Semmelroth et al.: This conference, TuP1.
3. W. S. Yoo and H. Matsunami: Jap. Journal of Appl. Physics 30 (1991), p. 545