Analysis of graphitization during physical vapor transport growth of silicon carbide

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 55-58

  Wellmann, P J ^a   Herro, Z ^a   Sakwe, S A ^a   Masri, P ^b   Bogdanov, M ^c   Karpov, S ^c   Kulik, A ^c   Ramm, M ^c   Makarov, Y ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c SOFT IMPACT LTD   (Russian Federation)

^d Semiconduct Technol Research Inc   (United States)

Author keywords

Numerical modeling; Physical vapor transport; Source material; X ray imaging

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTALLIZATION; GRAPHITIZATION; MASS TRANSFER; MATHEMATICAL MODELS; PHYSICAL VAPOR DEPOSITION; SUBLIMATION;

GAS FLUX; IN SITU GROWTH MONITORING; MASS TRANSPORT; SOURCE MATERIALS; X-RAY IMAGING;

SILICON CARBIDE;

EID: 8744220525     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.55     Document Type: Conference Paper

References (4)

1. P.J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T.L. Straubinger and A. Winnacker; J.Cryst.Growth Vol. 216 (2000), p. 263-272.
2. S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze and G. Pensl; Mat.Sci.Forum Vol. 338342 (2000), p. 579-581.
3. P. Wellmann, Z. Herro, M. Selder, F. Durst, R. Püsche, M. Hundhausen, L. Ley, A. Winnacker; Mat.Sci.Forum Vol. 433-436 (2003), p.9-12.
4. A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, A.I. Zhmakin, Yu.N. Makarov; submitted to Mat.Sci.Forum (2004).