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Volumn 275, Issue 1-2, 2005, Pages

In situ visualization of SiC physical vapor transport crystal growth

(11) Wellmann, Peter a Herro, Ziad a Winnacker, Albrecht a Püsche, Roland a Hundhausen, Martin a Masri, Pierre b Kulik, Alexey c Bogdanov, Maxim c Karpov, Sergey c Ramm, Mark c Makarov, Yuri d

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b UNIVERSITÉ MONTPELLIER 2 (France)

c SOFT IMPACT LTD (Russian Federation)

d Semiconduct Technol Research Inc (United States)

Author keywords

A1. Characterization; A1. Computer simulation; A2. Growth from vapor; B2. Semiconducting silicon compounds

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; CRYSTAL GROWTH; GRAPHITIZATION; PHYSICAL VAPOR DEPOSITION; POROSITY; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

GROWTH FROM VAPORS; MASS TRANSPORT; PHYSICAL VAPOR TRANSPORT (PVT); SOURCE MATERIAL MORPHOLOGY;

SILICON CARBIDE;

EID: 20144369062 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.253 Document Type: Conference Paper

Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.