Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 633-636

  Ujihara, T ^a   Munetoh, S ^b   Kusunoki, K ^b   Kamei, K ^b   Usami, N ^a   Fujiwara, K ^a   Sazaki, G ^a   Nakajima, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Sumitomo Metal Industries Limited   (Japan)

Author keywords

6H SIC; Carrier density; Crystal quality; LPE; Micropipe; Raman spectroscopy; Stress

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; LIQUID PHASE EPITAXY; MORPHOLOGY; OPTIMIZATION; RAMAN SCATTERING; SUBSTRATES; THERMODYNAMICS;

6H-SIC; CRYSTAL QUALITY; MICROPIPE; STRESS;

SILICON CARBIDE;

EID: 8744268406     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.633     Document Type: Conference Paper

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