SiC-bulk growth by physical-vapor transport and its global modelling

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 669-674

  Hofmann, D ^a   Eckstein, R ^a   Kolbl M ^a   Makarov, Y ^a   Muller St G ^a   Schmitt, E ^a   Winnacker, A ^a   Rupp, R ^b   Stein, R ^b   Volkl J ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

CVD of SiC epitaxial layers; Micropipe formation; Numerical modelling of SiC sublimation growth; Physical vapor transport; SiC bulk vapor growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; ETCHING; HALL EFFECT; HEAT TRANSFER; MASS TRANSFER; OPTICAL MICROSCOPY; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

MICROPIPE DENSITY; PHYSICAL VAPOR TRANSPORT (PVT);

SILICON CARBIDE;

EID: 0031547285     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00037-7     Document Type: Article

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