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Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 93-97

Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

(5) Selder, M a Kadinski, L a Durst, F a Straubinger, T a Hofmann, D a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Global heat transfer; Numerical modeling; Physical vapor transport; SiC bulk growth

Indexed keywords

CHEMICAL REACTORS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL GROWTH; ELECTROMAGNETIC FIELD EFFECTS; HEAT TRANSFER; ISOTHERMS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION;

ENERGY CONSERVATION EQUATION; HEAT SOURCES; MASS CONSERVATION EQUATION; MOMENTUM CONSERVATION EQUATION; PHYSICAL VAPOR TRANSPORT (PVT); SUBLIMATION GROWTH;

SILICON CARBIDE;

HEAT TRANSFER; REACTOR; TRANSPORT; VAPOR;

EID: 4243411646 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00453-X Document Type: Article

Times cited : (27)

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