Thermal system design and dislocation reduction for growth of wide band gap crystals: Application to SiC growth

Journal of Crystal Growth

Volumn 258, Issue 3-4, 2003, Pages 318-330

  Ma, R H ^a   Zhang, H ^a   Dudley, M ^a   Prasad, V ^b  

^a Stony Brook University   (United States)

^b FLORIDA INTERNATIONAL UNIVERSITY   (United States)

Author keywords

A1. Defects; A1. Growth models; A1. Stresses; A2. Growth from vapor

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ENERGY GAP; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; STRESS ANALYSIS; THERMAL EFFECTS; THERMOELASTICITY;

THERMAL SYSTEMS;

CRYSTAL GROWTH;

EID: 0141843598     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01540-9     Document Type: Article

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