Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3064-3066

  Schmid, F ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPLEXATION; DOPING (ADDITIVES); ELECTRONS; HALL EFFECT; ION IMPLANTATION; IONIZATION; LEAST SQUARES APPROXIMATIONS; NITROGEN; PARAMETER ESTIMATION; PHOSPHORUS; SAMPLING;

ELECTRICAL ACTIVATION; ELECTRON CONCENTRATION; INTRINSIC DEFECTS; TEMPERATURE DEPENDENCE;

SILICON CARBIDE;

EID: 2442608339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1707220     Document Type: Article

References (10)

1. H. H. Woodbury and G. W. Ludwig, Phys. Rev. 124, 1083 (1961).
2. E. N. Kalabukhova, S. N. Lukin, and E. N. Mokhov, Sov. Phys. Solid State 35, 361 (1993).
3. M. Laube, R Schmid, G. Pensl, G. Wagner, M. Linnarsson, and M. Maier, J. Appl. Phys. 92, 549 (2002).
4. T. Troffer, C. Peppermtiller, G. Pensl, K. Rottner, and A. Schöner, J. Appl. Phys. 80, 3739 (1996).
5. G. Rutsch, R. P. Devaty, W. J. Choyke, D. W. Langer, and L. B. Rowland, J. Appl. Phys. 84, 2062 (1998).
6. G. Wellenhofer and U. Rößler, Phys. Status Solidi B 202, 107 (1997).
7. S. Greulich-Weber, Phys. Status Solidi A 162, 95 (1997).
8. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, and N. Nordeil, Phys. Status Solidi A 162, 199 (1997).
9. D. Åberg, A. Hallen, P. Pellegrino, and B. G. Svensson, Appl. Phys. Lett. 78, 2908 (2001).
10. U. Gerstmann, E. Rauls, Th. Frauenheim, and H. Overhof, Phys. Rev. B 67, 205202 (2003).