Growth of nitrogen-doped SiC boules by halide chemical vapor deposition

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 359-362

  Fanton, M ^a   Snyder, D ^a   Weiland, B ^a   Cavalero, R ^a   Polyakov, A ^b   Skowronski, M ^b   Chung, H ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

A1. Doping; A2. Growth from vapor; A3. Chemical vapor deposition processes; B2. Semiconducting materials

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HALIDE MINERALS; IONS; MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SUBLIMATION;

CAPACITANCE-VOLTAGE MEASUREMENTS; CHEMICAL VAPOR DEPOSITION PROCESSES; GROWTH FROM VAPOR;

SILICON CARBIDE;

EID: 30344487583     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.044     Document Type: Conference Paper

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