Rapid enlargement of SiC single crystal using a cone-shaped platform

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 767-772

  Bahng, W ^a,b   Kitou, Y ^a   Nishizawa, S ^b   Yamaguchi, H ^b   Nasir Khan, M ^b   Oyanagi, N ^a   Nishino, S ^c   Arai, K ^b  

^a Advanced Power Device Laboratory   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; SUBLIMATION;

PHYSICAL VAPOR TRANSPORT (PVT); SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 0033908508     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00754-X     Document Type: Article

References (9)

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