Growth and characterization of high-purity SiC single crystals

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 339-342

  Augustine, G ^a   Balakrishna, V ^a   Brandt, C D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; DOPING (ADDITIVES); FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SILICON CARBIDE; TEMPERATURE; VANADIUM;

PHYSICAL VAPOR TRANSPORT METHOD; VANADIUM DOPING;

SINGLE CRYSTALS;

EID: 0033884415     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00826-X     Document Type: Article

References (4)

1. Sriram S., Augustine G., Burk A.A., Glass R.C., Hobgood H.M., Orphanos P.A., Rowland L.B., Smith T.J., Brandt C.D., Driver M.C., Hopkins R.H. Electron Device Lett. 17:1996;369.
2. Hobgood H.McD., Barrett D.L., McHugh J.P., Clarke R.C., Sriram S., Burke A.A., Greggi J., Brandt C.D., Hopkins R.H., Choyke W.J. J. Crystal Growth. 137:1994;181.
3. G. Pensl, V.V. Afanas'ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maier, W.J. Choyke, Silicon Carbide and Related Material 1995 Conference, Kyoto, Japan, Institute of Physics Conference Series, Vol. 142, IOP Publishing, Bristol, 1996, p. 275.
4. T. Troffer, Ch. Häbler, G. Pensl, Silicon Carbide and Related Material 1995 Conference, Kyoto, Japan, Institute of Physics Conference Series, Vol. 142, IOP Publishing, Bristol, 1996, p. 281.