The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1297-1300

  Hallin, C ^a   Konstantinov, A O ^a   Pecz B ^b   Kordina, O ^a,c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

Epitaxy; SiC; Stacking fault; Transmission electron microscopy (TEM)

Indexed keywords

EID: 0005769170     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00083-6     Document Type: Article

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