Modeling of silicon carbide crystal growth by physical vapor transport method

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 352-359

  Ma, R H ^a   Chen, Q S ^a   Zhang, H ^a   Prasad, V ^a   Balkas, C M ^b   Yushin, N K ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b Sterling Semiconductor Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTROMAGNETIC FIELDS; HEAT TRANSFER; SILICON CARBIDE; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; TRANSPORT PROPERTIES;

COIL CURRENT; PHYSICAL VAPOR TRANSPORT METHOD; VAPOR GROWTH;

CRYSTAL GROWTH;

EID: 0033877456     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00771-X     Document Type: Article

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