High-quality SiC bulk single crystal growth based on simulation and experiment

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 29-34

  Nishizawa, S I ^a   Kato, T ^a   Kitou, Y ^b   Oyanagi, N ^b   Hirose, F ^b   Yamaguchi, H ^a   Bahng, W ^b   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b R and D Assoc Fut Electron Devices   (Japan)

Author keywords

Crystal Growth; In situ Observation; Numerical Simulation; Single Crystal; Sublimation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTROMAGNETIC FIELDS; INDUCTION HEATING; RESIDUAL STRESSES; SINGLE CRYSTALS; SUBLIMATION;

IN-SITU OBSERVATION; RF INDUCTION HEATING; THERMAL FIELDS; X-RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 8744233141     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.29     Document Type: Conference Paper

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