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Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 541-548

Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process

(5) Chaussende, Didier a Blanquet, Elisabeth b Baillet, Francis b Ucar, Magali b,c Chichignoud, Guy b

a MINATEC (France)

b GRENOBLE INSTITUTE OF TECHNOLOGY (France)

c SAVOIE TECHNOLAC (France)

Author keywords

PVT; Silicon carbide; Thermodynamics

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; HYDROGEN; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; THERMODYNAMICS;

CHEMICAL INTERACTIONS; PHYSICAL VAPOR TRANSPORT (PVT);

SINGLE CRYSTALS;

EID: 33845572316 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200606471 Document Type: Article

Times cited : (17)

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