Micro-optical characterization study of highly p-type doped SiC:AI wafers

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 393-396

  Wellmann, P J ^a,b   Muller R ^a   Pons, M ^b   Thuaire, A ^c   Crisci, A ^c   Mermoux, M ^c   Auvray, L ^d,e  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIV GRENOBLE ALPES   (France)

^c LEPMI   (France)

^d LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^e SAVOIE TECHNOLAC   (France)

Author keywords

Absorption mapping; Birefringence; P type doping; Raman mapping

Indexed keywords

CHARGE CARRIERS; ELECTRONIC PROPERTIES; RAMAN SPECTROSCOPY; SILICON CARBIDE;

ABSORPTION MAPPING; RAMAN MAPPING;

SILICON WAFERS;

EID: 35148862190     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.393     Document Type: Conference Paper

References (5)

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