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Volumn 264-268, Issue PART 1, 1998, Pages 65-68

A coupled finite element model for the sublimation growth of SiC

Author keywords

Crystal Growth; Finite Element Method; Mathematical Modeling

Indexed keywords

CRYSTAL GROWTH; DIFFERENTIAL EQUATIONS; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SILICON CARBIDE; SUBLIMATION;

EID: 3743085033     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.65     Document Type: Article
Times cited : (18)

References (5)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.