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Volumn 264-268, Issue PART 1, 1998, Pages 65-68
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A coupled finite element model for the sublimation growth of SiC
a a b,c b,c b |
Author keywords
Crystal Growth; Finite Element Method; Mathematical Modeling
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Indexed keywords
CRYSTAL GROWTH;
DIFFERENTIAL EQUATIONS;
FINITE ELEMENT METHOD;
MATHEMATICAL MODELS;
SILICON CARBIDE;
SUBLIMATION;
PSEUDO DYNAMIC APPROACH;
SUBLIMATION GROWTH;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 3743085033
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.65 Document Type: Article |
Times cited : (18)
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References (5)
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