Advanced PVT growth of 2 & 3-inch diameter 6H SiC crystals

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 75-78

  Anderson, T A ^b   Barrett, D L ^b   Chen, J ^a   Elkington, W T ^b   Emorhokpor, E ^b   Gupta, A ^b   Johnson, C J ^b   Hopkins, R H ^b   Martin, C ^b   Kerr, T ^b   Semenas, E ^b   Souzis, A E ^b   Tanner, C D ^b   Yoganathan, M ^b   Zwieback, I ^a  

^a II VI Inc   (United States)

^b NONE

Author keywords

EPR; Micropipe; Native Defects; PL; Resistivity; Semi Insulating; Silicon Carbide; Sublimation Growth

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; PARAMAGNETIC RESONANCE; POINT DEFECTS; SEMICONDUCTOR DOPING; SUBLIMATION;

MICROPIPE; NATIVE DEFECST; ROOM TEMPERTURE RESISTIVITY; SEMI-INSULATING; SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 8644243080     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.75     Document Type: Conference Paper

References (2)

1. Northrop Grumman Patent No. 5,611,955 (1997). Licensed to II-VI.
2. J.R. Jenny et al., J. Electron Mater. 31 (2002) 366.