Hall effect in the channel of 3C-SiC MOSFETs

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 441-444

  Krieger, M ^a   Pensl, G ^a   Bakowski, M ^b   Schoner A ^b   Nagasawa, H ^c   Abe, M ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ACREO AB   (Sweden)

^c HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

3C SiC MOSFET; Density of interface states; Free electron areal density; Hall effect

Indexed keywords

CONCENTRATION (PROCESS); FREE ELECTRON LASERS; HALL EFFECT; SILICON CARBIDE;

3C-SIC MOSFET; DENSITY OF INTERFACE STATES; FREE ELECTRON AREAL DENSITY;

MOSFET DEVICES;

EID: 30344487858     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.441     Document Type: Conference Paper

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